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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 35, Iss. 10 — May. 15, 2010
  • pp: 1545–1547

Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm

Mingjun Chi, G. Erbert, B. Sumpf, and Paul Michael Petersen  »View Author Affiliations


Optics Letters, Vol. 35, Issue 10, pp. 1545-1547 (2010)
http://dx.doi.org/10.1364/OL.35.001545


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Abstract

A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659 to 675 nm . As high as 1.38 W output power is obtained at 668.35 nm . The emission spectral bandwidth is less than 0.07 nm throughout the tuning range, and the beam quality factor M 2 is 2.0 with the output power of 1.27 W .

© 2010 Optical Society of America

OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.2020) Lasers and laser optics : Diode lasers
(140.3280) Lasers and laser optics : Laser amplifiers
(140.5960) Lasers and laser optics : Semiconductor lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: January 7, 2010
Revised Manuscript: March 30, 2010
Manuscript Accepted: March 30, 2010
Published: May 5, 2010

Citation
Mingjun Chi, G. Erbert, B. Sumpf, and Paul Michael Petersen, "Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm," Opt. Lett. 35, 1545-1547 (2010)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-35-10-1545


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References

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