Abstract

A $668\mathrm{nm}$ tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from $659\text{to}675\mathrm{nm}$. As high as $1.38\mathrm{W}$ output power is obtained at $668.35\mathrm{nm}$. The emission spectral bandwidth is less than $0.07\mathrm{nm}$ throughout the tuning range, and the beam quality factor $M^2$ is 2.0 with the output power of $1.27\mathrm{W}$.

© 2010 Optical Society of America

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