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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 35, Iss. 15 — Aug. 1, 2010
  • pp: 2556–2557

Pr : Y Al O 3 microchip laser

Martin Fibrich, Helena Jelínková, Jan Šulc, Karel Nejezchleb, and Václav Škoda  »View Author Affiliations


Optics Letters, Vol. 35, Issue 15, pp. 2556-2557 (2010)
http://dx.doi.org/10.1364/OL.35.002556


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Abstract

A cw Pr : Y Al O 3 microchip-laser operation in the near-IR spectral region is reported. A microchip resonator was formed by dielectric mirrors directly deposited on the Pr : Y Al O 3 crystal surfaces. For active medium pumping, a GaN laser diode providing up to 1 W of output power at ~448 nm was used. 139 mW of laser radiation at 747 nm wavelength has been extracted from the microchip-laser system. Slope efficiency related to the incident pumping power was ~25%.

© 2010 Optical Society of America

OCIS Codes
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.3580) Lasers and laser optics : Lasers, solid-state
(140.7300) Lasers and laser optics : Visible lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: May 11, 2010
Manuscript Accepted: June 25, 2010
Published: July 22, 2010

Citation
Martin Fibrich, Helena Jelínková, Jan Šulc, Karel Nejezchleb, and Václav Škoda, "Pr:YAlO3 microchip laser," Opt. Lett. 35, 2556-2557 (2010)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-35-15-2556


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References

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