We report on the signal-to-noise performance of a nanoinjection imager, which is based on a short-wave IR InGaAs/GaAsSb/InP detector with an internal avalanche-free amplification mechanism. Test pixels in the imager show responsivity values reaching 250A/W at 1550nm, −75°C, and 1.5V due to an internal charge amplification mechanism in the detector. In the imager, the measured imager noise was 28 electrons (e−) rms at a frame rate of 1950frames/s. Additionally, compared to a high-end short-wave IR imager, the nanoinjection camera shows 2 orders of magnitude improved signal-to-noise ratio at thermoelectric cooling temperatures primarily due to the small excess noise at high amplification.
© 2010 Optical Society of America
Original Manuscript: April 23, 2010
Revised Manuscript: June 22, 2010
Manuscript Accepted: July 13, 2010
Published: August 6, 2010
Omer Gokalp Memis, John Kohoutek, Wei Wu, Ryan M. Gelfand, and Hooman Mohseni, "Signal-to-noise performance of a short-wave infrared nanoinjection imager," Opt. Lett. 35, 2699-2701 (2010)
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