We report on the signal-to-noise performance of a nanoinjection imager, which is based on a short-wave IR InGaAs/GaAsSb/InP detector with an internal avalanche-free amplification mechanism. Test pixels in the imager show responsivity values reaching $250\mathrm{A}/\mathrm{W}$ at $1550\mathrm{nm}$ , $-75°\mathrm{C}$ , and $1.5\mathrm{V}$ due to an internal charge amplification mech anism in the detector. In the imager, the measured imager noise was 28 electrons ( ${\mathrm{e}}^{-}$ ) rms at a frame rate of $1950\text{frames}/\mathrm{s}$ . Additionally, compared to a high-end short-wave IR imager, the nanoinjection camera shows 2 orders of magnitude improved signal-to-noise ratio at thermoelectric cooling temperatures primarily due to the small excess noise at high amplification.