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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 35, Iss. 19 — Oct. 1, 2010
  • pp: 3174–3176

High-efficiency red phosphorescent electroluminescence devices based on mixed p / n host matrices

Y. Duan, M. Mazzeo, G. Cheng, F. Mariano, and G. Gigli  »View Author Affiliations

Optics Letters, Vol. 35, Issue 19, pp. 3174-3176 (2010)

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In this Letter, we demonstrate a way to control the charge carrier transport mechanisms in phosphorescent organic light-emitting devices based on the mixing of two p and n host materials in the emissive layer (EML). The matrices have been selected in order to fulfill the requirements of the energy level mismatch with the transporting and emitting materials. By using the mixed-host approach in combination with a phosphorescent red emitter, namely (1-phenylisoquinoline) iridium (III) [ Ir ( p i q ) 3 ] , maximum external and power efficiencies of 14.3% and 10 lm / W , respectively, have been achieved, with an average external efficiency value of 12% in the luminance range 100 10 , 000 cd / m 2 .

© 2010 Optical Society of America

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(260.3800) Physical optics : Luminescence

ToC Category:
Optical Devices

Original Manuscript: May 5, 2010
Revised Manuscript: July 30, 2010
Manuscript Accepted: August 11, 2010
Published: September 21, 2010

Y. Duan, M. Mazzeo, G. Cheng, F. Mariano, and G. Gigli, "High-efficiency red phosphorescent electroluminescence devices based on mixed p / n host matrices," Opt. Lett. 35, 3174-3176 (2010)

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