Optical absorption enhancement in disordered vertical silicon nanowire arrays for photovoltaic applications
Optics Letters, Vol. 35, Issue 20, pp. 3378-3380 (2010)
http://dx.doi.org/10.1364/OL.35.003378
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Abstract
Optical properties are numerically investigated for vertically aligned silicon nanowire arrays with three types of structural randomness, i.e., random position, diameter, and length. Nanowire arrays with random position show slight absorption enhancement, while those with random diameter or length show significant absorption enhancement, which is attributed to the stronger optical scattering in a random structure. Our results indicate that structural randomness in vertical nanowire arrays will not destroy but rather can further enhance optical absorption compared to ordered nanowire arrays.
© 2010 Optical Society of America
OCIS Codes
(160.6000) Materials : Semiconductor materials
(350.6050) Other areas of optics : Solar energy
(160.4236) Materials : Nanomaterials
(290.5825) Scattering : Scattering theory
ToC Category:
Materials
History
Original Manuscript: March 31, 2010
Revised Manuscript: August 19, 2010
Manuscript Accepted: September 14, 2010
Published: October 8, 2010
Citation
Hua Bao and Xiulin Ruan, "Optical absorption enhancement in disordered vertical silicon nanowire arrays for photovoltaic applications," Opt. Lett. 35, 3378-3380 (2010)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-35-20-3378
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