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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 35, Iss. 20 — Oct. 15, 2010
  • pp: 3378–3380

Optical absorption enhancement in disordered vertical silicon nanowire arrays for photovoltaic applications

Hua Bao and Xiulin Ruan  »View Author Affiliations

Optics Letters, Vol. 35, Issue 20, pp. 3378-3380 (2010)

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Optical properties are numerically investigated for vertically aligned silicon nanowire arrays with three types of structural randomness, i.e., random position, diameter, and length. Nanowire arrays with random position show slight absorption enhancement, while those with random diameter or length show significant absorption enhancement, which is attributed to the stronger optical scattering in a random structure. Our results indicate that structural randomness in vertical nanowire arrays will not destroy but rather can further enhance optical absorption compared to ordered nanowire arrays.

© 2010 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(350.6050) Other areas of optics : Solar energy
(160.4236) Materials : Nanomaterials
(290.5825) Scattering : Scattering theory

ToC Category:

Original Manuscript: March 31, 2010
Revised Manuscript: August 19, 2010
Manuscript Accepted: September 14, 2010
Published: October 8, 2010

Hua Bao and Xiulin Ruan, "Optical absorption enhancement in disordered vertical silicon nanowire arrays for photovoltaic applications," Opt. Lett. 35, 3378-3380 (2010)

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