Facet-embedded thin-film III–V edge-emitting lasers integrated with SU-8 waveguides on silicon
Optics Letters, Vol. 35, Issue 20, pp. 3474-3476 (2010)
http://dx.doi.org/10.1364/OL.35.003474
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Abstract
A thin-film InGaAs/GaAs edge-emitting single-quantum-well laser has been integrated with a tapered multimode SU-8 waveguide onto an Si substrate. The SU-8 waveguide is passively aligned to the laser using mask-based photolithography, mimicking electrical interconnection in Si complementary metal–oxide semiconductor, and overlaps one facet of the thin-film laser for coupling power from the laser to the waveguide. Injected threshold current densities of
© 2010 Optical Society of America
OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(230.3120) Optical devices : Integrated optics devices
(250.3140) Optoelectronics : Integrated optoelectronic circuits
(250.5300) Optoelectronics : Photonic integrated circuits
(130.6622) Integrated optics : Subsystem integration and techniques
(130.5460) Integrated optics : Polymer waveguides
ToC Category:
Integrated Optics
History
Original Manuscript: August 31, 2010
Manuscript Accepted: September 2, 2010
Published: October 13, 2010
Citation
Sabarni Palit, Jeremy Kirch, Mengyuan Huang, Luke Mawst, and Nan Marie Jokerst, "Facet-embedded thin-film III–V edge-emitting lasers integrated with SU-8 waveguides on silicon," Opt. Lett. 35, 3474-3476 (2010)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-35-20-3474
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