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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 35, Iss. 22 — Nov. 15, 2010
  • pp: 3793–3795

Epitaxial Nd-doped α - ( Al 1 x Ga x ) 2 O 3 films on sapphire for solid-state waveguide lasers

Raveen Kumaran, Thomas Tiedje, Scott E. Webster, Shawn Penson, and Wei Li  »View Author Affiliations


Optics Letters, Vol. 35, Issue 22, pp. 3793-3795 (2010)
http://dx.doi.org/10.1364/OL.35.003793


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Abstract

Single-crystal aluminum–gallium oxide films have been grown by molecular beam epitaxy in the corundum phase. Films of the ( Al 1 x Ga x ) 2 O 3 alloys doped with neodymium have favorable properties for solid-state waveguide lasers, including a high-thermal-conductivity sapphire substrate and a dominant emission peak in the 1090 1096 nm wavelength range. The peak position is linearly correlated to the unit cell volume, which is dependent on film composition and stress. Varying the Ga–Al alloy composition during growth will enable the fabrication of graded-index layers for tunable lasing wavelengths and low scattering losses at the interfaces.

© 2010 Optical Society of America

OCIS Codes
(160.3380) Materials : Laser materials
(160.5690) Materials : Rare-earth-doped materials
(310.0310) Thin films : Thin films

ToC Category:
Materials

History
Original Manuscript: September 14, 2010
Manuscript Accepted: October 5, 2010
Published: November 9, 2010

Citation
Raveen Kumaran, Thomas Tiedje, Scott E. Webster, Shawn Penson, and Wei Li, "Epitaxial Nd-doped α-(Al1−xGax)2O3 films on sapphire for solid-state waveguide lasers," Opt. Lett. 35, 3793-3795 (2010)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-35-22-3793


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