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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 35, Iss. 24 — Dec. 15, 2010
  • pp: 4090–4092

Picosecond passively mode-locked GaSb-based semiconductor disk laser operating at 2 μm

Antti Härkönen, Jonna Paajaste, Soile Suomalainen, Jukka-Pekka Alanko, Christian Grebing, Riku Koskinen, Günter Steinmeyer, and Mircea Guina  »View Author Affiliations

Optics Letters, Vol. 35, Issue 24, pp. 4090-4092 (2010)

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We report on a passively mode-locked optically pumped GaSb-based semiconductor disk laser producing stable picosecond optical pulses at a 1.95 μm wavelength. The gain mirror was comprised of a 15 quantum well InGaSb/GaSb structure. A fast semiconductor saturable absorber mirror with three InGaSb / GaSb quantum wells was used to attain self-starting mode-locked operation at a fundamental repetition rate of 881.2 MHz . The laser produced pulses with 30 pJ energy and a duration of 1.1 ps within a factor of 2 of the Fourier limit.

© 2010 Optical Society of America

OCIS Codes
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(140.4050) Lasers and laser optics : Mode-locked lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7270) Lasers and laser optics : Vertical emitting lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: September 29, 2010
Revised Manuscript: November 8, 2010
Manuscript Accepted: November 8, 2010
Published: December 1, 2010

Antti Härkönen, Jonna Paajaste, Soile Suomalainen, Jukka-Pekka Alanko, Christian Grebing, Riku Koskinen, Günter Steinmeyer, and Mircea Guina, "Picosecond passively mode-locked GaSb-based semiconductor disk laser operating at 2μm," Opt. Lett. 35, 4090-4092 (2010)

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