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Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer |
Optics Letters, Vol. 35, Issue 24, pp. 4109-4111 (2010)
http://dx.doi.org/10.1364/OL.35.004109
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Abstract
Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength
© 2010 Optical Society of America
OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(240.7040) Optics at surfaces : Tunneling
(260.7190) Physical optics : Ultraviolet
ToC Category:
Optical Devices
History
Original Manuscript: August 24, 2010
Revised Manuscript: November 3, 2010
Manuscript Accepted: November 4, 2010
Published: December 6, 2010
Citation
Tzu-Chun Lu, Min-Yung Ke, Sheng-Chieh Yang, Yun-Wei Cheng, Liang-Yi Chen, Guan-Jhong Lin, Yu-Hsin Lu, Jr-Hau He, Hao-Chung Kuo, and JianJang Huang, "Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer," Opt. Lett. 35, 4109-4111 (2010)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-35-24-4109
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