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Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Alan E. Willner
  • Vol. 35, Iss. 4 — Feb. 15, 2010
  • pp: 469–471

Terahertz dual-band resonator on silicon

Yong Ma, Qin Chen, A. Khalid, Shimul C. Saha, and David R.S. Cumming  »View Author Affiliations


Optics Letters, Vol. 35, Issue 4, pp. 469-471 (2010)
http://dx.doi.org/10.1364/OL.35.000469


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Abstract

We have designed and fabricated a dual-band resonator in the terahertz frequency range on high-resistivity silicon. The device is designed to show resonances at 2.6 and 4.3 THz using the finite-difference time-domain modeling method. The characteristics of the fabricated device have been examined by using a Fourier-transform IR spectrometer. Measured results are in excellent agreement with the simulated data, showing two polarization-independent resonant peaks observed at 2.60 and 4.37 THz , respectively. The first resonance has a bandwidth of 0.56 THz , while the second one has a bandwidth of 0.70 THz . These dual-band resonant devices can be used for various applications such as dual-band spectral imaging and multiband biosensors.

© 2010 Optical Society of America

OCIS Codes
(220.0220) Optical design and fabrication : Optical design and fabrication
(230.5750) Optical devices : Resonators
(230.7408) Optical devices : Wavelength filtering devices

ToC Category:
Optical Devices

History
Original Manuscript: December 2, 2009
Manuscript Accepted: January 4, 2010
Published: February 4, 2010

Citation
Yong Ma, Qin Chen, A. Khalid, Shimul C. Saha, and David R. S. Cumming, "Terahertz dual-band resonator on silicon," Opt. Lett. 35, 469-471 (2010)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-35-4-469


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