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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 35, Iss. 4 — Feb. 15, 2010
  • pp: 547–549

Electroluminescence from silicon-based photonic crystal microcavities with PbSe quantum dots

Junseok Heo, Ting Zhu, Chunfeng Zhang, Jian Xu, and Pallab Bhattacharya  »View Author Affiliations

Optics Letters, Vol. 35, Issue 4, pp. 547-549 (2010)

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The characteristics of electrically injected silicon-based photonic crystal microcavities with PbSe quantum dots are described. The device includes suitable electron and hole transporting layers and contact layers. The measured electroluminescence at room temperature exhibits an enhanced spontaneous emission. The resonant mode is observed at λ = 1669   nm with a spectral linewidth of 4 nm, corresponding to a cavity Q factor of 420 .

© 2010 Optical Society of America

OCIS Codes
(230.3120) Optical devices : Integrated optics devices
(230.6080) Optical devices : Sources
(230.5298) Optical devices : Photonic crystals

ToC Category:
Optical Devices

Original Manuscript: October 5, 2009
Revised Manuscript: December 14, 2009
Manuscript Accepted: January 6, 2010
Published: February 11, 2010

Junseok Heo, Ting Zhu, Chunfeng Zhang, Jian Xu, and Pallab Bhattacharya, "Electroluminescence from silicon-based photonic crystal microcavities with PbSe quantum dots," Opt. Lett. 35, 547-549 (2010)

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