Ge-on-Si laser operating at room temperature
Optics Letters, Vol. 35, Issue 5, pp. 679-681 (2010)
http://dx.doi.org/10.1364/OL.35.000679
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Abstract
Monolithic lasers on Si are ideal for high-volume and large-scale electronic–photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide semiconductor technology. Recently we have demonstrated room-temperature photoluminescence, electroluminescence, and optical gain from the direct gap transition of band-engineered Ge-on-Si using tensile strain and n-type doping. Here we report what we believe to be the first experimental observation of lasing from the direct gap transition of Ge-on-Si at room temperature using an edge-emitting waveguide device. The emission exhibited a gain spectrum of
© 2010 Optical Society of America
OCIS Codes
(130.5990) Integrated optics : Semiconductors
(160.3380) Materials : Laser materials
(250.5960) Optoelectronics : Semiconductor lasers
ToC Category:
Integrated Optics
History
Original Manuscript: December 18, 2009
Revised Manuscript: January 20, 2010
Manuscript Accepted: January 21, 2010
Published: February 24, 2010
Citation
Jifeng Liu, Xiaochen Sun, Rodolfo Camacho-Aguilera, Lionel C. Kimerling, and Jurgen Michel, "Ge-on-Si laser operating at room temperature," Opt. Lett. 35, 679-681 (2010)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-35-5-679
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