Monolithic lasers on Si are ideal for high-volume and large-scale electronic-photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide semiconductor technology. Recently we have demonstrated room-temperature photoluminescence, electroluminescence, and optical gain from the direct gap transition of band-engineered Ge-on-Si using tensile strain and n-type doping. Here we report what we believe to be the first experimental observation of lasing from the direct gap transition of Ge-on-Si at room temperature using an edge-emitting waveguide device. The emission exhibited a gain spectrum of 1590-1610 nm, line narrowing and polarization evolution from a mixed TE/TM to predominantly TE with increasing gain, and a clear threshold behavior.
© 2010 Optical Society of America
Original Manuscript: December 18, 2009
Revised Manuscript: January 20, 2010
Manuscript Accepted: January 21, 2010
Published: February 24, 2010
Jifeng Liu, Xiaochen Sun, Rodolfo Camacho-Aguilera, Lionel C. Kimerling, and Jurgen Michel, "Ge-on-Si laser operating at room temperature," Opt. Lett. 35, 679-681 (2010)