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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 35, Iss. 5 — Mar. 1, 2010
  • pp: 694–696

Optically pumped semiconductor quantum dot disk laser operating at 1180 nm

Jussi Rautiainen, Igor Krestnikov, Mantas Butkus, Edik U. Rafailov, and Oleg G. Okhotnikov  »View Author Affiliations


Optics Letters, Vol. 35, Issue 5, pp. 694-696 (2010)
http://dx.doi.org/10.1364/OL.35.000694


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Abstract

We demonstrate an optically pumped semiconductor disk laser using 39 layers of Stranski–Krastanov InGaAs quantum dots self-assembled during epitaxial growth on a monolithic Ga As Al As distributed Bragg reflector. The gain structure bonded to an intracavity diamond crystal heat spreader allows 1.75 W single-transverse-mode output ( M 2 < 1.2 ) with circular beam shape operating at 1180 nm in a disk laser geometry.

© 2010 Optical Society of America

OCIS Codes
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7270) Lasers and laser optics : Vertical emitting lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: November 24, 2009
Revised Manuscript: January 13, 2010
Manuscript Accepted: January 15, 2010
Published: February 25, 2010

Citation
Jussi Rautiainen, Igor Krestnikov, Mantas Butkus, Edik U. Rafailov, and Oleg G. Okhotnikov, "Optically pumped semiconductor quantum dot disk laser operating at 1180 nm," Opt. Lett. 35, 694-696 (2010)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-35-5-694


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References

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