Abstract
We design and experimentally report strain-compensated InGaAs/InAlAs coupled quantum wells with modified potential. At a lower applied electric field , the calculated blueshift of the lowest excitonic peak is 40.6 meV. In the room-temperature photocurrent experiments, a maximum upward shift of the apparent peak position of more than 35 meV is observed with an external reverse bias of −4 V. Furthermore, a lower absorption loss and a large negative refractive index change are obtained at . This indicates that the strain-compensated InGaAs/InAlAs coupled quantum wells with modified potential have a great potential for application to reflection type electro-optical switches.
© 2010 Optical Society of America
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