Size-independent low-frequency Raman scattering in Ge-nanocrystal-embedded SiO2 films
Optics Letters, Vol. 35, Issue 7, pp. 1022-1024 (2010)
http://dx.doi.org/10.1364/OL.35.001022
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Abstract
The peak position and linewidth of the low-frequency Raman mode observed from amorphous silica films embedded with Ge nanocrystals doped with Si show a size-independent behavior. Spectral analysis reveals the formation of a thin amorphous GeSi layer on the surface of the Ge nanocrystal. Theoretical calculation based on a modified three-region model discloses that the acoustic impedance of the interfacial GeSiO layer is responsible for the size-independent behavior. During high-temperature annealing, Ge atoms are segregated from the interface into the core, and the GeSiO interface layer is converted to
© 2010 Optical Society of America
OCIS Codes
(160.0160) Materials : Materials
(260.0260) Physical optics : Physical optics
(290.0290) Scattering : Scattering
(300.0300) Spectroscopy : Spectroscopy
(310.0310) Thin films : Thin films
ToC Category:
Materials
History
Original Manuscript: December 3, 2009
Revised Manuscript: February 4, 2010
Manuscript Accepted: February 4, 2010
Published: March 30, 2010
Citation
L. Z. Liu, X. L. Wu, F. Gao, Y. M. Yang, T. H. Li, and Paul K. Chu, "Size-independent low-frequency Raman scattering in Ge-nanocrystal-embedded SiO2 films," Opt. Lett. 35, 1022-1024 (2010)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-35-7-1022
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