Femtosecond laser-drilling-induced HgCdTe photodiodes
Optics Letters, Vol. 35, Issue 7, pp. 971-973 (2010)
http://dx.doi.org/10.1364/OL.35.000971
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Abstract
Femtosecond-laser drilling may induce holes in HgCdTe with morphology similar to that induced by ion-milling in loophole technique. So-formed hole structures are proven to be
© 2010 Optical Society of America
OCIS Codes
(040.3060) Detectors : Infrared
(220.4000) Optical design and fabrication : Microstructure fabrication
(300.6470) Spectroscopy : Spectroscopy, semiconductors
ToC Category:
Detectors
History
Original Manuscript: December 3, 2009
Revised Manuscript: February 24, 2010
Manuscript Accepted: February 24, 2010
Published: March 24, 2010
Citation
F.-X. Zha, M. S. Li, J. Shao, W. T. Yin, S. M. Zhou, X. Lu, Q. T. Guo, Z. H. Ye, T. X. Li, H. L. Ma, B. Zhang, and X. C. Shen, "Femtosecond laser-drilling-induced HgCdTe photodiodes," Opt. Lett. 35, 971-973 (2010)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-35-7-971
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