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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 35, Iss. 7 — Apr. 1, 2010
  • pp: 971–973

Femtosecond laser-drilling-induced HgCdTe photodiodes

F.-X. Zha, M. S. Li, J. Shao, W. T. Yin, S. M. Zhou, X. Lu, Q. T. Guo, Z. H. Ye, T. X. Li, H. L. Ma, B. Zhang, and X. C. Shen  »View Author Affiliations

Optics Letters, Vol. 35, Issue 7, pp. 971-973 (2010)

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Femtosecond-laser drilling may induce holes in HgCdTe with morphology similar to that induced by ion-milling in loophole technique. So-formed hole structures are proven to be p n junction diodes by the laser beam induced current characterization as well as the conductivity measurement. Transmission and photoluminescence spectral measurements on a n-type dominated hole-array structure give rise to different results from those of an ion-milled sample.

© 2010 Optical Society of America

OCIS Codes
(040.3060) Detectors : Infrared
(220.4000) Optical design and fabrication : Microstructure fabrication
(300.6470) Spectroscopy : Spectroscopy, semiconductors

ToC Category:

Original Manuscript: December 3, 2009
Revised Manuscript: February 24, 2010
Manuscript Accepted: February 24, 2010
Published: March 24, 2010

F.-X. Zha, M. S. Li, J. Shao, W. T. Yin, S. M. Zhou, X. Lu, Q. T. Guo, Z. H. Ye, T. X. Li, H. L. Ma, B. Zhang, and X. C. Shen, "Femtosecond laser-drilling-induced HgCdTe photodiodes," Opt. Lett. 35, 971-973 (2010)

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