Advantages of blue InGaN light-emitting diodes with AlGaN barriers
Optics Letters, Vol. 35, Issue 9, pp. 1368-1370 (2010)
http://dx.doi.org/10.1364/OL.35.001368
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Abstract
The advantages of blue InGaN light-emitting diodes (LEDs) with AlGaN barriers are studied numerically. The performance curves, energy band diagrams, electrostatic fields, and carrier concentrations are investigated. The simulation results show that the
© 2010 Optical Society of America
OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
ToC Category:
Optical Devices
History
Original Manuscript: March 1, 2010
Revised Manuscript: March 24, 2010
Manuscript Accepted: March 25, 2010
Published: April 23, 2010
Citation
Jih-Yuan Chang, Miao-Chan Tsai, and Yen-Kuang Kuo, "Advantages of blue InGaN light-emitting diodes with AlGaN barriers," Opt. Lett. 35, 1368-1370 (2010)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-35-9-1368
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