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Polarization dependence of quantum-confined Stark effect in Ge/SiGe quantum well planar waveguides |
Optics Letters, Vol. 36, Issue 10, pp. 1794-1796 (2011)
http://dx.doi.org/10.1364/OL.36.001794
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Abstract
We report room-temperature quantum-confined Stark effect in Ge/SiGe multiple quantum wells (MQWs) with light propagating parallel to the plane of the Ge/SiGe MQWs for applications in integrated photonics. Planar waveguides embedded in a p-i-n diode are fabricated in order to investigate the absorption spectra at different reverse bias voltages from optical transmission measurements for both TE and TM polarizations. Polarization dependence of the absorption spectra of the Ge/SiGe MQWs is clearly observed. The planar waveguides exhibit a high extinction ratio and low insertion loss over a wide spectral range for TE polarization.
© 2011 Optical Society of America
OCIS Codes
(230.0230) Optical devices : Optical devices
(230.0250) Optical devices : Optoelectronics
ToC Category:
Optical Devices
History
Original Manuscript: January 12, 2011
Revised Manuscript: April 4, 2011
Manuscript Accepted: April 12, 2011
Published: May 6, 2011
Citation
Papichaya Chaisakul, Delphine Marris-Morini, Giovanni Isella, Daniel Chrastina, Xavier Le Roux, Samson Edmond, Jean-René Coudevylle, Eric Cassan, and Laurent Vivien, "Polarization dependence of quantum-confined Stark effect in Ge/SiGe quantum well planar waveguides," Opt. Lett. 36, 1794-1796 (2011)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-36-10-1794
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