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Optics Letters

Optics Letters


  • Vol. 36, Iss. 10 — May. 15, 2011
  • pp: 1908–1910

Threshold gain analysis in GaN-based photonic crystal surface emitting lasers

Peng-Hsiang Weng, Tzeng-Tsong Wu, Tien-Chang Lu, and Shing-Chung Wang  »View Author Affiliations

Optics Letters, Vol. 36, Issue 10, pp. 1908-1910 (2011)

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We have analyzed threshold gains and lasing modes in GaN-based photonic crystal (PC) surface emitting lasers (PCSELs) by using the multiple scattering method (MSM) for triangular-lattice PC patterns. Moreover, GaN-based PCSELs with different boundary shapes have been fabricated and measured. The lasing mode at the Γ band edge of GaN-based PCSELs can be identified by using the angled resolved spectroscopy and matched well to the results calculated by MSM. Threshold conditions in the GaN-based PCSELs with different boundary shapes are obtained by optical pumping and agree well with simulation results.

© 2011 Optical Society of America

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(160.5298) Materials : Photonic crystals
(140.7270) Lasers and laser optics : Vertical emitting lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: March 8, 2011
Revised Manuscript: April 20, 2011
Manuscript Accepted: April 20, 2011
Published: May 13, 2011

Peng-Hsiang Weng, Tzeng-Tsong Wu, Tien-Chang Lu, and Shing-Chung Wang, "Threshold gain analysis in GaN-based photonic crystal surface emitting lasers," Opt. Lett. 36, 1908-1910 (2011)

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