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Optics Letters

Optics Letters


  • Vol. 36, Iss. 10 — May. 15, 2011
  • pp: 1927–1929

Terahertz spectroscopy studies on epitaxial vanadium dioxide thin films across the metal-insulator transition

Pankaj Mandal, Andrew Speck, Changhyun Ko, and Shriram Ramanathan  »View Author Affiliations

Optics Letters, Vol. 36, Issue 10, pp. 1927-1929 (2011)

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We present results on terahertz (THz) spectroscopy on epitaxial vanadium dioxide ( VO 2 ) films grown on sapphire across the metal-insulator transition. X-ray diffraction indicates the VO 2 film is highly oriented with the crystallographic relationship: ( 002 ) film / / ( 0006 ) sub and [ 010 ] film / / [ 2 1 ¯ 1 ¯ 0 ] sub . THz studies measuring the change in transmission as a function of temperature demonstrate an 85% reduction in transmission as the thin film completes its phase transition to the conducting phase, which is much greater than the previous observation on polycrystalline films. This indicates the crucial role of microstructure and phase homogeneity in influencing THz properties.

© 2011 Optical Society of America

OCIS Codes
(000.2190) General : Experimental physics
(300.6340) Spectroscopy : Spectroscopy, infrared
(300.6450) Spectroscopy : Spectroscopy, Raman
(160.3918) Materials : Metamaterials

ToC Category:

Original Manuscript: December 13, 2010
Revised Manuscript: April 13, 2011
Manuscript Accepted: April 15, 2011
Published: May 13, 2011

Pankaj Mandal, Andrew Speck, Changhyun Ko, and Shriram Ramanathan, "Terahertz spectroscopy studies on epitaxial vanadium dioxide thin films across the metal-insulator transition," Opt. Lett. 36, 1927-1929 (2011)

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