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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 36, Iss. 14 — Jul. 15, 2011
  • pp: 2617–2619

Blue–green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures

Y. Berencén, O. Jambois, J. M. Ramírez, J. M. Rebled, S. Estradé, F. Peiró, C. Domínguez, J. A. Rodríguez, and B. Garrido  »View Author Affiliations

Optics Letters, Vol. 36, Issue 14, pp. 2617-2619 (2011)

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Blue–green to near-IR switching electroluminescence (EL) has been achieved in a metal-oxide-semiconductor light emitting device, where the dielectric has been replaced by a Si-rich silicon oxide/nitride bilayer structure. To form Si nanostructures, the layers were implanted with Si ions at high energy, resulting in a Si excess of 19%, and subsequently annealed at 1000 ° C . Transmission electron microscopy and EL studies allowed ascribing the blue–green emission to the Si nitride related defects and the near-IR band with the emission of the Si-nanoclusters embedded into the SiO 2 layer. Charge transport analysis is reported and allows for identifying the origin of this two-wavelength switching effect.

© 2011 Optical Society of America

OCIS Codes
(230.2090) Optical devices : Electro-optical devices
(230.6080) Optical devices : Sources
(250.0250) Optoelectronics : Optoelectronics
(260.3800) Physical optics : Luminescence

ToC Category:

Original Manuscript: March 2, 2011
Revised Manuscript: May 27, 2011
Manuscript Accepted: June 14, 2011
Published: July 11, 2011

Y. Berencén, O. Jambois, J. M. Ramírez, J. M. Rebled, S. Estradé, F. Peiró, C. Domínguez, J. A. Rodríguez, and B. Garrido, "Blue–green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures," Opt. Lett. 36, 2617-2619 (2011)

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