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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 36, Iss. 14 — Jul. 15, 2011
  • pp: 2677–2679

Effective method to extract optical bandgaps in Si nanowire arrays

Jin-Young Jung, Keya Zhou, Han-Don Um, Zhongyi Guo, Sang-Won Jee, Kwang-Tae Park, and Jung-Ho Lee  »View Author Affiliations

Optics Letters, Vol. 36, Issue 14, pp. 2677-2679 (2011)

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A simple method to extract the optical bandgap of Si nanowire (SiNW) arrays that utilizes the reflection spectra of freestanding SiNW arrays is presented in this Letter. At a fixed nanowire diameter, three different wire lengths reproducibly formed a cross point in their reflectance curve plots. The cross point wavelength corresponded to the optical bandgap, as verified by the classical Tauc’s model. The optical bandgap of the SiNW arrays ( 112 nm in average diameter) was measured to be 1.19 eV , which is larger than the 1.08 eV bandgap of bulk Si. Further decreasing the wire diameter to 68 nm caused an increase of the bandgap to 1.24 eV , which is closer to the optimal bandgap ( 1.40 eV ) required to achieve the highest conversion efficiency in single-junction photovoltaic devices. Our method suggests that the multijunction tandem structure can be realized via control of the diameter of SiNW arrays.

© 2011 Optical Society of America

OCIS Codes
(040.6040) Detectors : Silicon
(120.5700) Instrumentation, measurement, and metrology : Reflection
(350.6050) Other areas of optics : Solar energy

ToC Category:
Thin Films

Original Manuscript: May 6, 2011
Revised Manuscript: May 23, 2011
Manuscript Accepted: May 27, 2011
Published: July 13, 2011

Jin-Young Jung, Keya Zhou, Han-Don Um, Zhongyi Guo, Sang-Won Jee, Kwang-Tae Park, and Jung-Ho Lee, "Effective method to extract optical bandgaps in Si nanowire arrays," Opt. Lett. 36, 2677-2679 (2011)

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