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Optics Letters

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  • Vol. 36, Iss. 15 — Aug. 1, 2011
  • pp: 2800–2802

SOI metal-oxide-semiconductor field-effect transistor photon detector based on single-hole counting

Wei Du, Hiroshi Inokawa, Hiroaki Satoh, and Atsushi Ono  »View Author Affiliations


Optics Letters, Vol. 36, Issue 15, pp. 2800-2802 (2011)
http://dx.doi.org/10.1364/OL.36.002800


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Abstract

In this Letter, a scaled-down silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) is characterized as a photon detector, where photogenerated individual holes are trapped below the negatively biased gate and modulate stepwise the electron current flowing in the bottom channel induced by the positive substrate bias. The output waveforms exhibit clear separation of current levels corresponding to different numbers of trapped holes. Considering this capability of single-hole counting, a small dark count of less than 0.02 s 1 at room temperature, and low operation voltage of 1 V , SOI MOSFET could be a unique photon-number-resolving detector if the small quantum efficiency were improved.

© 2011 Optical Society of America

OCIS Codes
(040.3780) Detectors : Low light level
(040.5160) Detectors : Photodetectors
(040.6040) Detectors : Silicon
(040.6070) Detectors : Solid state detectors
(230.5160) Optical devices : Photodetectors

ToC Category:
Detectors

History
Original Manuscript: February 25, 2011
Revised Manuscript: June 21, 2011
Manuscript Accepted: June 23, 2011
Published: July 20, 2011

Citation
Wei Du, Hiroshi Inokawa, Hiroaki Satoh, and Atsushi Ono, "SOI metal-oxide-semiconductor field-effect transistor photon detector based on single-hole counting," Opt. Lett. 36, 2800-2802 (2011)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-36-15-2800


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