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Optics Letters

Optics Letters


  • Vol. 36, Iss. 16 — Aug. 15, 2011
  • pp: 3203–3205

Forming the graded-refractive-index antireflection layers on light-emitting diodes to enhance the light extraction

Joong-Yeon Cho, Kyeong-Jae Byeon, and Heon Lee  »View Author Affiliations

Optics Letters, Vol. 36, Issue 16, pp. 3203-3205 (2011)

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Distributed antireflection (AR) layers with different composition ratios of ITO and SiO 2 formed on an ITO electrode of GaN-based LEDs provide substantial enhancement in light-extraction efficiency. By using the coradio frequency magnetron sputtering deposition, four 50 nm thick AR layers with graduated refractive indices were fabricated. The effect of the AR layers on enhancing the efficiency of the LED device was analyzed by electroluminescence (EL) and I-V measurements. As a result, the EL intensity of the LED device grown on the patterned sapphire substrate with AR layers was increased by up to 13% compared to the conventional patterned sapphire substrate-applied LED device without AR layers at a drive current of 20 mA . The AR layers on top of the LED device gradually changed the refractive indices between ITO ( n = 2.1 ) and air ( n = 1.0 ), which minimized the total internal reflection of generated light. And no degradation in the electrical characteristic of the LEDs was observed according to the I-V measurements.

© 2011 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(310.1210) Thin films : Antireflection coatings
(310.1860) Thin films : Deposition and fabrication
(310.6860) Thin films : Thin films, optical properties

ToC Category:
Thin Films

Original Manuscript: June 6, 2011
Revised Manuscript: July 7, 2011
Manuscript Accepted: July 21, 2011
Published: August 12, 2011

Joong-Yeon Cho, Kyeong-Jae Byeon, and Heon Lee, "Forming the graded-refractive-index antireflection layers on light-emitting diodes to enhance the light extraction," Opt. Lett. 36, 3203-3205 (2011)

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  1. Y. Kawakami, Y. Narukawa, K. Omae, S. Fujita, and S. Nakamura, Phys. Status Solidi A 178, 331 (2000). [CrossRef]
  2. H. Benisty, H. De Neve, and C. Weisbuch, IEEE J. Quantum Electron. 34, 1632 (1998). [CrossRef]
  3. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, Appl. Phys. Lett. 84, 855 (2004). [CrossRef]
  4. M. Fujta, S. Takahashi, Y. Tanaka, T. Asano, and S. Noda, Science 308, 1296 (2005). [CrossRef]
  5. H. Gao, F. Yan, Y. Zhang, J. Li, Y. Zeng, and G. Wang, J. Appl. Phys. 103, 014314-1 (2008).
  6. L. Rayleigh, Proc. London Math. Soc. s1-11, 51 (1879). [CrossRef]
  7. K. J. Byeon, E. J. Hong, H. Park, J. Y. Cho, S. H. Lee, J. Jhin, J. H. Baek, and H. Lee, Thin Solid Films 519, 2241 (2011). [CrossRef]
  8. Fullwave 6.1 RSOFT design group (2008), http://www.rsoftdesign.com.

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