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Optics Letters

Optics Letters


  • Vol. 36, Iss. 16 — Aug. 15, 2011
  • pp: 3206–3208

InP-based deep-ridge NPN transistor laser

S. Liang, D. H. Kong, H. L. Zhu, L. J. Zhao, J. Q. Pan, and W. Wang  »View Author Affiliations

Optics Letters, Vol. 36, Issue 16, pp. 3206-3208 (2011)

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We report an InP-based deep-ridge NPN transistor laser (TL, λ 1.5 μm ). By placing the quantum well (QW) active material above the heavily Zn-doped base layer, both the optical absorption of the heavily p-doped base material and the damage of the quality of the QWs resulted from the Zn diffusion into the QWs are decreased greatly. CW operation of the TL is achieved at 40 ° C , which is much better than the shallow-ridge InP-based NPN TL. With future optimization of the growth procedure, significant improvement of the performance of the deep-ridge InP-based NPN TLs is expected.

© 2011 Optical Society of America

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(160.6000) Materials : Semiconductor materials
(250.5960) Optoelectronics : Semiconductor lasers
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:

Original Manuscript: June 8, 2011
Manuscript Accepted: July 6, 2011
Published: August 12, 2011

S. Liang, D. H. Kong, H. L. Zhu, L. J. Zhao, J. Q. Pan, and W. Wang, "InP-based deep-ridge NPN transistor laser," Opt. Lett. 36, 3206-3208 (2011)

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