The impact of the polarization compensation InGaN interlayer between the heterolayers of Ga-face GaN/InGaN p-i-n solar cells is investigated numerically. Because of the enhancement of carrier collection efficiency, the conversion efficiency is improved markedly, which can be ascribed to both the reduction of the polarization-induced electric field in the InGaN absorption layer and the mitigation of potential barriers at heterojunctions. This beneficial effect is more remarkable in situations with higher polarization, such as devices with a lower degree of relaxation or devices with a higher indium composition in the InGaN absorption layer.
© 2011 Optical Society of America
Original Manuscript: July 18, 2011
Revised Manuscript: August 10, 2011
Manuscript Accepted: August 10, 2011
Published: September 1, 2011
Jih-Yuan Chang, Bo-Ting Liou, Han-Wei Lin, Ya-Hsuan Shih, Shu-Hsuan Chang, and Yen-Kuang Kuo, "Numerical investigation on the enhanced carrier collection efficiency of Ga-face GaN/InGaN p-i-n solar cells with polarization compensation interlayers," Opt. Lett. 36, 3500-3502 (2011)