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Optics Letters

Optics Letters


  • Vol. 36, Iss. 19 — Oct. 1, 2011
  • pp: 3717–3719

Charge state switching of deep levels for low-power optical modulation in silicon waveguides

D. F. Logan, P. Velha, M. Sorel, R. M. De La Rue, G. Wojcik, A. Goebel, P. E. Jessop, and A. P. Knights  »View Author Affiliations

Optics Letters, Vol. 36, Issue 19, pp. 3717-3719 (2011)

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We demonstrate a method for the efficient modulation of optical wavelengths around 1550 nm in silicon wave guides. The amplitude of a propagating signal is mediated via control of the charge state of indium centers, rather than using free-carriers alone as in the plasma-dispersion effect. A 1 × 1 switch formed of an integrated p - i - n junction in an indium-doped silicon on insulator (SOI) waveguide provides ‘normally-off’ silicon absorption of greater than 7 dB at zero bias. This loss is decreased to 2.8 dB with application of a 6 V applied reverse bias, with a power consumption of less than 1 μW .

© 2011 Optical Society of America

OCIS Codes
(230.3120) Optical devices : Integrated optics devices
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:

Original Manuscript: August 15, 2011
Manuscript Accepted: August 22, 2011
Published: September 19, 2011

D. F. Logan, P. Velha, M. Sorel, R. M. De La Rue, G. Wojcik, A. Goebel, P. E. Jessop, and A. P. Knights, "Charge state switching of deep levels for low-power optical modulation in silicon waveguides," Opt. Lett. 36, 3717-3719 (2011)

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