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  • Vol. 36, Iss. 2 — Jan. 15, 2011
  • pp: 223–225

Contactless photoconductive terahertz generation

H. Zhang, J. K. Wahlstrand, S. B. Choi, and S. T. Cundiff  »View Author Affiliations


Optics Letters, Vol. 36, Issue 2, pp. 223-225 (2011)
http://dx.doi.org/10.1364/OL.36.000223


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Abstract

We describe a pulsed terahertz (THz) emitter that uses a rapidly oscillating, high-voltage bias across electrodes insulated from a photoconductor. Because no carriers are injected from the electrodes, trap-enhanced electric fields do not form. The resulting uniform field allows excitation with a large laser spot, lowering the carrier density for a given pulse energy and increasing the efficiency of THz generation. Compared to a dc bias, less susceptibility to damage is observed.

© 2011 Optical Society of America

OCIS Codes
(320.0320) Ultrafast optics : Ultrafast optics
(300.6495) Spectroscopy : Spectroscopy, teraherz

ToC Category:
Spectroscopy

History
Original Manuscript: October 19, 2010
Manuscript Accepted: November 15, 2010
Published: January 12, 2011

Virtual Issues
Vol. 6, Iss. 2 Virtual Journal for Biomedical Optics

Citation
H. Zhang, J. K. Wahlstrand, S. B. Choi, and S. T. Cundiff, "Contactless photoconductive terahertz generation," Opt. Lett. 36, 223-225 (2011)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-36-2-223


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References

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  10. We have produced a higher bias amplitude of ∼400V at ∼44MHz, as described in .
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