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Measurement of the dielectric constant of thin films by terahertz time-domain spectroscopic ellipsometry |
Optics Letters, Vol. 36, Issue 2, pp. 265-267 (2011)
http://dx.doi.org/10.1364/OL.36.000265
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Abstract
We present a reflection-type terahertz time-domain spectroscopic ellipsometry (THz-TDSE) technique for measuring the complex dielectric constants of thin-film materials without replacement of the sample. THz-TDSE provides complex dielectric constants from the ratio of the complex amplitude reflection coefficients between p- and s- polarized THz waves. The measured dielectric constants of doped GaAs thin films show good agreement with predictions of the Drude model, even though the film thickness is of the order of a tenth of the penetration depth of the THz waves. In addition, we demonstrate the measurements of soft-phonon dispersion in
© 2011 Optical Society of America
OCIS Codes
(160.2260) Materials : Ferroelectrics
(160.6000) Materials : Semiconductor materials
(310.6188) Thin films : Spectral properties
(300.6495) Spectroscopy : Spectroscopy, teraherz
ToC Category:
Spectroscopy
History
Original Manuscript: September 2, 2010
Revised Manuscript: November 16, 2010
Manuscript Accepted: December 7, 2010
Published: January 13, 2011
Citation
Naoki Matsumoto, Tadasu Hosokura, Takeshi Nagashima, and Masanori Hangyo, "Measurement of the dielectric constant of thin films by terahertz time-domain spectroscopic ellipsometry," Opt. Lett. 36, 265-267 (2011)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-36-2-265
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