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Optics Letters

Optics Letters


  • Vol. 36, Iss. 2 — Jan. 15, 2011
  • pp: 265–267

Measurement of the dielectric constant of thin films by terahertz time-domain spectroscopic ellipsometry

Naoki Matsumoto, Tadasu Hosokura, Takeshi Nagashima, and Masanori Hangyo  »View Author Affiliations

Optics Letters, Vol. 36, Issue 2, pp. 265-267 (2011)

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We present a reflection-type terahertz time-domain spectroscopic ellipsometry (THz-TDSE) technique for measuring the complex dielectric constants of thin-film materials without replacement of the sample. THz-TDSE provides complex dielectric constants from the ratio of the complex amplitude reflection coefficients between p- and s- polarized THz waves. The measured dielectric constants of doped GaAs thin films show good agreement with predictions of the Drude model, even though the film thickness is of the order of a tenth of the penetration depth of the THz waves. In addition, we demonstrate the measurements of soft-phonon dispersion in SrTiO 3 thin films deposited on a Pt layer. The obtained dielectric constants agree well with the predictions of a generalized harmonic oscillator model.

© 2011 Optical Society of America

OCIS Codes
(160.2260) Materials : Ferroelectrics
(160.6000) Materials : Semiconductor materials
(310.6188) Thin films : Spectral properties
(300.6495) Spectroscopy : Spectroscopy, teraherz

ToC Category:

Original Manuscript: September 2, 2010
Revised Manuscript: November 16, 2010
Manuscript Accepted: December 7, 2010
Published: January 13, 2011

Naoki Matsumoto, Tadasu Hosokura, Takeshi Nagashima, and Masanori Hangyo, "Measurement of the dielectric constant of thin films by terahertz time-domain spectroscopic ellipsometry," Opt. Lett. 36, 265-267 (2011)

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