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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 36, Iss. 21 — Nov. 1, 2011
  • pp: 4158–4160

Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon

L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F. Y. Gardes, I. P. Marko, S. J. Sweeney, Z. Ikonić, D. R. Leadley, G. T. Reed, and R. W. Kelsall  »View Author Affiliations


Optics Letters, Vol. 36, Issue 21, pp. 4158-4160 (2011)
http://dx.doi.org/10.1364/OL.36.004158


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Abstract

We report modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon via the quantum-confined Stark effect. Strain engineering was exploited to increase the direct optical bandgap in the Ge quantum wells. We grew 9 nm -thick Ge quantum wells on a relaxed Si 0.22 Ge 0.78 buffer and a contrast in the absorption coefficient of a factor of greater than 3.2 was achieved in the spectral range 1290 1315 nm .

© 2011 Optical Society of America

OCIS Codes
(230.4110) Optical devices : Modulators
(260.6580) Physical optics : Stark effect
(230.4205) Optical devices : Multiple quantum well (MQW) modulators
(250.4110) Optoelectronics : Modulators
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Optoelectronics

History
Original Manuscript: July 19, 2011
Revised Manuscript: September 19, 2011
Manuscript Accepted: September 22, 2011
Published: October 19, 2011

Citation
L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F. Y. Gardes, I. P. Marko, S. J. Sweeney, Z. Ikonić, D. R. Leadley, G. T. Reed, and R. W. Kelsall, "Modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon," Opt. Lett. 36, 4158-4160 (2011)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-36-21-4158


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