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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 36, Iss. 21 — Nov. 1, 2011
  • pp: 4287–4289

High temperature and wavelength dependence of avalanche gain of AlAsSb avalanche photodiodes

Ian C. Sandall, Shiyu Xie, JingJing Xie, and Chee Hing Tan  »View Author Affiliations


Optics Letters, Vol. 36, Issue 21, pp. 4287-4289 (2011)
http://dx.doi.org/10.1364/OL.36.004287


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Abstract

The evolution of the dark currents and breakdown at elevated temperatures of up to 450 K are studied using thin AlAsSb avalanche regions. While the dark currents increase rapidly as the temperature is increased, the avalanche gain is shown to only have a weak temperature dependence. Temperature coefficients of breakdown voltage of 0.93 and 1.93 mV / K were obtained from the diodes of 80 and 230 nm avalanche regions (i-regions), respectively. These values are significantly lower than for other available avalanche materials at these temperatures. The wavelength dependence of multiplication characteristics of AlAsSb p - i - n diodes has also been investigated, and it was found that the ionization coefficients for electrons and holes are comparable within the electric field and wavelength ranges measured.

© 2011 Optical Society of America

OCIS Codes
(060.4510) Fiber optics and optical communications : Optical communications
(160.1890) Materials : Detector materials
(230.0040) Optical devices : Detectors
(040.1345) Detectors : Avalanche photodiodes (APDs)
(250.1345) Optoelectronics : Avalanche photodiodes (APDs)

ToC Category:
Detectors

History
Original Manuscript: August 25, 2011
Revised Manuscript: October 10, 2011
Manuscript Accepted: October 10, 2011
Published: November 1, 2011

Citation
Ian C. Sandall, Shiyu Xie, JingJing Xie, and Chee Hing Tan, "High temperature and wavelength dependence of avalanche gain of AlAsSb avalanche photodiodes," Opt. Lett. 36, 4287-4289 (2011)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-36-21-4287


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