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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 36, Iss. 22 — Nov. 15, 2011
  • pp: 4401–4403

50 dB parametric on-chip gain in silicon photonic wires

Bart Kuyken, Xiaoping Liu, Günther Roelkens, Roel Baets, Richard M. Osgood, Jr., and William M. J. Green  »View Author Affiliations


Optics Letters, Vol. 36, Issue 22, pp. 4401-4403 (2011)
http://dx.doi.org/10.1364/OL.36.004401


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Abstract

A pulsed mid-infrared pump at λ = 2173 nm is used to demonstrate wideband optical parametric gain in a low-loss 2 cm long silicon photonic wire. Using dispersion engineering to obtain negative second-order ( β 2 ) and positive fourth-order ( β 4 ) dispersion, we generate broadband modulation instability and parametric fluorescence extending from 1911 nm 2486 nm . Using a cw probe signal to interrogate the modulation instability spectrum, we demonstrate parametric amplification > 40 dB with an on-chip gain bandwidth wider than 580 nm , as well as narrowband Raman-assisted peak gain > 50 dB .

© 2011 Optical Society of America

OCIS Codes
(130.4310) Integrated optics : Nonlinear
(190.4380) Nonlinear optics : Nonlinear optics, four-wave mixing
(190.4970) Nonlinear optics : Parametric oscillators and amplifiers

ToC Category:
Nonlinear Optics

History
Original Manuscript: June 9, 2011
Revised Manuscript: October 3, 2011
Manuscript Accepted: October 4, 2011
Published: November 15, 2011

Citation
Bart Kuyken, Xiaoping Liu, Günther Roelkens, Roel Baets, Richard M. Osgood, Jr., and William M. J. Green, "50 dB parametric on-chip gain in silicon photonic wires," Opt. Lett. 36, 4401-4403 (2011)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-36-22-4401


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