The performance of two-section, passively mode-locked semiconductor lasers is theoretically analyzed for different cavity designs. Placing the saturable absorber section close to an antireflection-coated facet leads to a substantial increase in output power and a reduction in amplitude and timing jitter. Moreover, it broadens the bias current region of stable passive mode-locking operation.
© 2011 Optical Society of America
Lasers and Laser Optics
Original Manuscript: September 20, 2011
Revised Manuscript: October 3, 2011
Manuscript Accepted: October 3, 2011
Published: November 15, 2011
J. Javaloyes and S. Balle, "Anticolliding design for monolithic passively mode-locked semiconductor lasers," Opt. Lett. 36, 4407-4409 (2011)