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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 36, Iss. 22 — Nov. 15, 2011
  • pp: 4407–4409

Anticolliding design for monolithic passively mode-locked semiconductor lasers

J. Javaloyes and S. Balle  »View Author Affiliations


Optics Letters, Vol. 36, Issue 22, pp. 4407-4409 (2011)
http://dx.doi.org/10.1364/OL.36.004407


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Abstract

The performance of two-section, passively mode-locked semiconductor lasers is theoretically analyzed for different cavity designs. Placing the saturable absorber section close to an antireflection-coated facet leads to a substantial increase in output power and a reduction in amplitude and timing jitter. Moreover, it broadens the bias current region of stable passive mode-locking operation.

© 2011 Optical Society of America

OCIS Codes
(140.3280) Lasers and laser optics : Laser amplifiers
(250.5980) Optoelectronics : Semiconductor optical amplifiers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: September 20, 2011
Revised Manuscript: October 3, 2011
Manuscript Accepted: October 3, 2011
Published: November 15, 2011

Citation
J. Javaloyes and S. Balle, "Anticolliding design for monolithic passively mode-locked semiconductor lasers," Opt. Lett. 36, 4407-4409 (2011)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-36-22-4407


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