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Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Alan E. Willner
  • Vol. 36, Iss. 3 — Feb. 1, 2011
  • pp: 319–321

Continuous-wave room-temperature operation of a 2.8 μm GaSb-based semiconductor disk laser

Benno Rösener, Marcel Rattunde, Rüdiger Moser, Sebastian Kaspar, Tino Töpper, Christian Manz, Klaus Köhler, and Joachim Wagner  »View Author Affiliations


Optics Letters, Vol. 36, Issue 3, pp. 319-321 (2011)
http://dx.doi.org/10.1364/OL.36.000319


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Abstract

We demonstrate an optically pumped semiconductor disk laser based on the (AlGaIn)(AsSb) material system, which operates at an emission wavelength of 2.8 μm . Up to 120 mW of output power were obtained in cw operation and more than 500 mW in pulsed mode. The performance of the present laser is discussed in comparison to shorter-wavelength semiconductor disk lasers based on the same materials system.

© 2011 Optical Society of America

OCIS Codes
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(160.6000) Materials : Semiconductor materials
(250.5960) Optoelectronics : Semiconductor lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: November 3, 2010
Manuscript Accepted: November 29, 2010
Published: January 21, 2011

Citation
Benno Rösener, Marcel Rattunde, Rüdiger Moser, Sebastian Kaspar, Tino Töpper, Christian Manz, Klaus Köhler, and Joachim Wagner, "Continuous-wave room-temperature operation of a 2.8 μm GaSb-based semiconductor disk laser," Opt. Lett. 36, 319-321 (2011)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-36-3-319


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References

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