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Continuous-wave room-temperature operation of a 2.8 μm GaSb-based semiconductor disk laser |
Optics Letters, Vol. 36, Issue 3, pp. 319-321 (2011)
http://dx.doi.org/10.1364/OL.36.000319
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Abstract
We demonstrate an optically pumped semiconductor disk laser based on the (AlGaIn)(AsSb) material system, which operates at an emission wavelength of
© 2011 Optical Society of America
OCIS Codes
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(160.6000) Materials : Semiconductor materials
(250.5960) Optoelectronics : Semiconductor lasers
ToC Category:
Lasers and Laser Optics
History
Original Manuscript: November 3, 2010
Manuscript Accepted: November 29, 2010
Published: January 21, 2011
Citation
Benno Rösener, Marcel Rattunde, Rüdiger Moser, Sebastian Kaspar, Tino Töpper, Christian Manz, Klaus Köhler, and Joachim Wagner, "Continuous-wave room-temperature operation of a 2.8 μm GaSb-based semiconductor disk laser," Opt. Lett. 36, 319-321 (2011)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-36-3-319
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