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Optics Letters

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  • Vol. 36, Iss. 7 — Apr. 1, 2011
  • pp: 1083–1085

Continuous-wave Raman laser pumped within a semiconductor disk laser cavity

Daniele C. Parrotta, Walter Lubeigt, Alan J. Kemp, David Burns, Martin D. Dawson, and Jennifer E. Hastie  »View Author Affiliations


Optics Letters, Vol. 36, Issue 7, pp. 1083-1085 (2011)
http://dx.doi.org/10.1364/OL.36.001083


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Abstract

A KGd ( WO 4 ) 2 Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5.6 W of absorbed diode pump power, and output power up to 0.8 W at 1143 nm , with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and 1157 nm .

© 2011 Optical Society of America

OCIS Codes
(140.3550) Lasers and laser optics : Lasers, Raman
(140.3580) Lasers and laser optics : Lasers, solid-state
(140.3600) Lasers and laser optics : Lasers, tunable
(140.7270) Lasers and laser optics : Vertical emitting lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: January 21, 2011
Revised Manuscript: February 22, 2011
Manuscript Accepted: February 22, 2011
Published: March 18, 2011

Citation
Daniele C. Parrotta, Walter Lubeigt, Alan J. Kemp, David Burns, Martin D. Dawson, and Jennifer E. Hastie, "Continuous-wave Raman laser pumped within a semiconductor disk laser cavity," Opt. Lett. 36, 1083-1085 (2011)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-36-7-1083


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