Abstract

A $\mathrm{KGd}({\mathrm{WO}}_4{)}_2$ Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for $5.6\mathrm{W}$ of absorbed diode pump power, and output power up to $0.8\mathrm{W}$ at $1143\mathrm{nm}$, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and $1157\mathrm{nm}$.

© 2011 Optical Society of America

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