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Optics Letters

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  • Vol. 36, Iss. 7 — Apr. 1, 2011
  • pp: 1182–1184

Dark current suppression in an erbium–germanium–erbium photodetector with an asymmetric electrode area

Jin-Hong Park and Hyun-Yong Yu  »View Author Affiliations


Optics Letters, Vol. 36, Issue 7, pp. 1182-1184 (2011)
http://dx.doi.org/10.1364/OL.36.001182


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Abstract

In this work, suppression of the dark current level in a metal–semiconductor–metal (MSM) photodetector fabricated on the intrinsic (i) Ge is achieved by exploiting (1) the Er electrode, providing a relatively high hole barrier, and (2) the concept of asymmetric electrode area, to minimize the Schottky barrier height lowering effect. Compared with a symmetric MSM photodetector fabricated with Ti electrodes, the dark current level was reduced by a factor of about 80. This low dark current i-Ge MSM photodetector is promising for applications requiring low power and a high photo-to-dark-current ratio.

© 2011 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(230.5160) Optical devices : Photodetectors
(310.3840) Thin films : Materials and process characterization

ToC Category:
Detectors

History
Original Manuscript: January 4, 2011
Revised Manuscript: February 15, 2011
Manuscript Accepted: February 17, 2011
Published: March 25, 2011

Citation
Jin-Hong Park and Hyun-Yong Yu, "Dark current suppression in an erbium–germanium–erbium photodetector with an asymmetric electrode area," Opt. Lett. 36, 1182-1184 (2011)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-36-7-1182


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References

  1. H. Zang, S. J. Lee, W. Y. Loh, J. Wang, K. T. Chua, M. B. Yu, B. J. Cho, G. Q. Lo, and D.-L. Kwong, IEEE Electron Device Lett. 29, 161 (2008). [CrossRef]
  2. L. Vivien, M. Rouviere, J. Fedeli, D. Marris-Morini, J. Damlencourt, J. Mangeney, P. Crozat, L. Melhaoui, E. Cassan, X. Roux, D. Pascal, and S. Laval, Opt. Express 15, 9843 (2007). [CrossRef] [PubMed]
  3. L. Chen and M. Lipson, Opt. Express 17, 7901 (2009). [CrossRef] [PubMed]
  4. C. O. Chui and K. C. Saraswat, in Germanium-Based Technologies: From Materials to Devices, C.Claeys and E.Simeon, eds. (Elsevier Science, 2007), pp. 74–75.
  5. A. Dimoulas, P. Tsipas, A. Sotiropoulos, and E. K. Evangelou, Appl. Phys. Lett. 89, 252110 (2006). [CrossRef]
  6. D. Han, Y. Wang, D. Tian, W. Wang, X. Liu, J. Kang, and R. Han, Microelectron. Eng. 82, 93 (2005). [CrossRef]
  7. R. Li, H. Yao, S. Lee, D. Chi, M. Yu, G. Lo, and D. Kwong, Thin Solid Films 504, 28 (2006). [CrossRef]
  8. M. Kobayashi, A. Kinoshita, K. C. Saraswat, H.-S. P. Wong, and Y. Nishi, J. Appl. Phys. 105, 023702 (2009). [CrossRef]
  9. T. Takahashi, T. Nishimura, L. Chen, S. Sakata, K. Kita, and A. Toriumi, in IEEE IEDM Technical Digest (IEEE, 2007), pp. 697–700.

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