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Random bit generation using an optically injected semiconductor laser in chaos with oversampling |
Optics Letters, Vol. 37, Issue 11, pp. 2163-2165 (2012)
http://dx.doi.org/10.1364/OL.37.002163
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Abstract
Random bit generation is experimentally demonstrated using a semiconductor laser driven into chaos by optical injection. The laser is not subject to any feedback so that the chaotic waveform possesses very little autocorrelation. Random bit generation is achieved at a sampling rate of 10 GHz even when only a fractional bandwidth of 1.5 GHz within a much broader chaotic bandwidth is digitized. By retaining only 3 least significant bits per sample, an output bit rate of 30 Gbps is attained. The approach requires no complicated postprocessing and has no stringent requirement on the electronics bandwidth.
© 2012 Optical Society of America
OCIS Codes
(140.1540) Lasers and laser optics : Chaos
(140.3520) Lasers and laser optics : Lasers, injection-locked
(140.5960) Lasers and laser optics : Semiconductor lasers
(190.3100) Nonlinear optics : Instabilities and chaos
ToC Category:
Lasers and Laser Optics
History
Original Manuscript: February 21, 2012
Revised Manuscript: April 12, 2012
Manuscript Accepted: April 20, 2012
Published: June 1, 2012
Citation
Xiao-Zhou Li and Sze-Chun Chan, "Random bit generation using an optically injected semiconductor laser in chaos with oversampling," Opt. Lett. 37, 2163-2165 (2012)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-37-11-2163
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