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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 37, Iss. 12 — Jun. 15, 2012
  • pp: 2205–2207

Investigation of InGaN green light-emitting diodes with chirped multiple quantum well structures

Yi-An Chang, Yih-Ting Kuo, Jih-Yuan Chang, and Yen-Kuang Kuo  »View Author Affiliations

Optics Letters, Vol. 37, Issue 12, pp. 2205-2207 (2012)

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The effect of using chirped multiple quantum-well (MQW) structures in InGaN green light-emitting diodes (LEDs) is numerically investigated. An active structure, which is with both thick QWs with low indium composition on the p-side and thin QWs with high indium composition next to the n-region, is presented in this study. The thickness and indium composition in each single QW is specifically tuned to emit the same green emission spectrum. Comparing with conventional active structure design of green LEDs, which is using uniform MQWs, the output power is increased by 27% at 20 mA, and by 15% at 100 mA current injections. This improvement is mainly attributed to the enhanced efficiency of carrier injection into QWs and the improved capability of carrier transport.

© 2012 Optical Society of America

OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Optical Devices

Original Manuscript: February 27, 2012
Revised Manuscript: March 26, 2012
Manuscript Accepted: April 5, 2012
Published: June 4, 2012

Yi-An Chang, Yih-Ting Kuo, Jih-Yuan Chang, and Yen-Kuang Kuo, "Investigation of InGaN green light-emitting diodes with chirped multiple quantum well structures," Opt. Lett. 37, 2205-2207 (2012)

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