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Investigation of InGaN green light-emitting diodes with chirped multiple quantum well structures |
Optics Letters, Vol. 37, Issue 12, pp. 2205-2207 (2012)
http://dx.doi.org/10.1364/OL.37.002205
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Abstract
The effect of using chirped multiple quantum-well (MQW) structures in InGaN green light-emitting diodes (LEDs) is numerically investigated. An active structure, which is with both thick QWs with low indium composition on the
© 2012 Optical Society of America
OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
ToC Category:
Optical Devices
History
Original Manuscript: February 27, 2012
Revised Manuscript: March 26, 2012
Manuscript Accepted: April 5, 2012
Published: June 4, 2012
Citation
Yi-An Chang, Yih-Ting Kuo, Jih-Yuan Chang, and Yen-Kuang Kuo, "Investigation of InGaN green light-emitting diodes with chirped multiple quantum well structures," Opt. Lett. 37, 2205-2207 (2012)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-37-12-2205
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