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Optics Letters

Optics Letters


  • Vol. 37, Iss. 13 — Jul. 1, 2012
  • pp: 2760–2762

A non-selenization technology by co-sputtering deposition for solar cell applications

Bao-Tang Jheng, Po-Tsun Liu, Meng-Chyi Wu, and Han-Ping D. Shieh  »View Author Affiliations

Optics Letters, Vol. 37, Issue 13, pp. 2760-2762 (2012)

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This work presents a novel method to form polycrystalline Cu(In1xGax)Se2 (CIGS) thin film by co-sputtering of InSe and CuGa alloy targets without an additional selenization process. An attempt was also made to thoroughly elucidate the surface morphology, crystalline phases, physical properties, and chemical properties of the CIGS films by using material analysis methods. Experimental results indicate that CIGS thin films featured densely packed grains and chalcopyrite phase peaks of (112), (220), (204), (312), and (116). Raman spectroscopy analysis revealed chalcopyrite CIGS phase with Raman shift at 175cm1, while no signal at 258  cm1 indicated the exclusion of Cu2xSe phase. Hall effect measurements confirmed the polycrystalline Cu(In,Ga)Se2 thin film to be of p type semiconductor with a film resistivity and mobility of 2.19×102Ωcm and 88cm2/Vs, respectively.

© 2012 Optical Society of America

OCIS Codes
(350.0350) Other areas of optics : Other areas of optics
(350.6050) Other areas of optics : Solar energy

ToC Category:
Thin Films

Original Manuscript: February 13, 2012
Revised Manuscript: March 22, 2012
Manuscript Accepted: March 22, 2012
Published: June 29, 2012

Bao-Tang Jheng, Po-Tsun Liu, Meng-Chyi Wu, and Han-Ping D. Shieh, "A non-selenization technology by co-sputtering deposition for solar cell applications," Opt. Lett. 37, 2760-2762 (2012)

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