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Gallium-nitride-based plasmonic multilayer operating at 1.55 μm |
Optics Letters, Vol. 37, Issue 15, pp. 3039-3041 (2012)
http://dx.doi.org/10.1364/OL.37.003039
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Abstract
In this Letter, we have designed and fabricated a III-V semiconductor multilayer based on surface plasmon resonance (SPR) operating at the telecom wavelength. Optimization of the optogeometrical parameters and the metal/semiconductor layers required for this novel structure was conducted accurately by theoretical tools using the Maxwell equations. Technological fabrication of the device and its experimental characterizations using an evanescent coupling configuration was performed: the results have confirmed the existence of SPR associated to a sharp width response. This study could be a first step in the design of new plasmonic-semiconductor-based optical devices such as modulators and switches.
© 2012 Optical Society of America
OCIS Codes
(240.0310) Optics at surfaces : Thin films
(240.6680) Optics at surfaces : Surface plasmons
(250.5403) Optoelectronics : Plasmonics
ToC Category:
Optics at Surfaces
History
Original Manuscript: February 29, 2012
Revised Manuscript: June 4, 2012
Manuscript Accepted: June 9, 2012
Published: July 16, 2012
Citation
Arnaud Stolz, Laurence Considine, Salim Faci, Elhadj Dogheche, Charlotte Tripon-Canseliet, Brigitte Loiseaux, Dimitris Pavlidis, Didier Decoster, and Jean Chazelas, "Gallium-nitride-based plasmonic multilayer operating at 1.55 μm," Opt. Lett. 37, 3039-3041 (2012)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-37-15-3039
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