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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 37, Iss. 15 — Aug. 1, 2012
  • pp: 3072–3074

Narrowband ultraviolet photodetector based on MgZnO and NPB heterojunction

Zuofu Hu, Zhenjun Li, Lu Zhu, Fengjuan Liu, Yanwu Lv, Xiqing Zhang, and Yongsheng Wang  »View Author Affiliations

Optics Letters, Vol. 37, Issue 15, pp. 3072-3074 (2012)

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An ultraviolet photodetector was fabricated based on Mg0.07Zn0.93O heterojunction. N, N’-bis (naphthalen-1-y1)-N, N’-bis(pheny) benzidine was selected as the hole transporting layer. I-V characteristic curves of the device were measured in the dark and under the illumination of 340 nm UV light with density of 1.33mW/cm2. The device showed a low dark current of about 3×1010A and a high photo-dark current ratio of 1×105 at 2V bias. A narrowband photoresponse was observed from 300 to 400 nm and centered at 340 nm with a full width at half-maximum of only 30 nm. The maximum peak response is at 340 nm, which is 0.192A/W at the bias of 1V.

© 2012 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(040.7190) Detectors : Ultraviolet
(160.4890) Materials : Organic materials
(160.6000) Materials : Semiconductor materials

ToC Category:

Original Manuscript: April 25, 2012
Revised Manuscript: May 21, 2012
Manuscript Accepted: May 31, 2012
Published: July 18, 2012

Zuofu Hu, Zhenjun Li, Lu Zhu, Fengjuan Liu, Yanwu Lv, Xiqing Zhang, and Yongsheng Wang, "Narrowband ultraviolet photodetector based on MgZnO and NPB heterojunction," Opt. Lett. 37, 3072-3074 (2012)

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