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Trimming of high-Q-factor silicon ring resonators by electron beam bleaching |
Optics Letters, Vol. 37, Issue 15, pp. 3114-3116 (2012)
http://dx.doi.org/10.1364/OL.37.003114
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Abstract
We demonstrate a novel position-resolved resonance trimming strategy for silicon ring resonators. Ring resonators are covered with a chromophore-doped guest host polymer cladding. Illumination of the polymer cladding with high-energy electrons causes a bleaching of the chromophore molecules. Bleaching of the chromophores induces a reduction of the polymer refractive index, which can be used to trim the resonance frequency of the ring resonators. A maximum refractive index change of 0.06 and a TM polarization resonance shift of 16.4 nm have been measured. A
© 2012 Optical Society of America
OCIS Codes
(130.0130) Integrated optics : Integrated optics
(220.4241) Optical design and fabrication : Nanostructure fabrication
ToC Category:
Integrated Optics
History
Original Manuscript: February 7, 2012
Revised Manuscript: March 12, 2012
Manuscript Accepted: May 10, 2012
Published: July 20, 2012
Citation
Stefan Prorok, Alexander Yu. Petrov, Manfred Eich, Jingdong Luo, and Alex K.-Y. Jen, "Trimming of high-Q-factor silicon ring resonators by electron beam bleaching," Opt. Lett. 37, 3114-3116 (2012)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-37-15-3114
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