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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 37, Iss. 16 — Aug. 15, 2012
  • pp: 3369–3371

Delocalization of femtosecond radiation in silicon

Vitali V. Kononenko, Vitali V. Konov, and Evgeny M. Dianov  »View Author Affiliations

Optics Letters, Vol. 37, Issue 16, pp. 3369-3371 (2012)

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The processes, induced by local action of the IR femtosecond laser pulse (λ=1.2μm, τ=250fs) in the bulk of silicon monocrystal, are studied. Infrared femtosecond interferometry was for the first time applied for visualization of beam propagation inside opaque materials. Dependences of laser-induced variation of material polarizability on pulse energy were obtained and essential wave-packet spreading in space was revealed. This leads to huge delocalization of light—scattering outside the beam caustic exceeds 99% of pulse energy. This effect results in extremely high optical damage threshold of crystalline silicon bulk—irreversible changes in material structure and optical properties were not observed for pulse energy up to 90 μJ. The role of beam Kerr self-focusing and defocusing by an electron-hole plasma inside c:Si is discussed.

© 2012 Optical Society of America

OCIS Codes
(140.3390) Lasers and laser optics : Laser materials processing
(190.4720) Nonlinear optics : Optical nonlinearities of condensed matter
(320.7100) Ultrafast optics : Ultrafast measurements
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors
(280.5395) Remote sensing and sensors : Plasma diagnostics

ToC Category:
Lasers and Laser Optics

Original Manuscript: March 26, 2012
Revised Manuscript: July 13, 2012
Manuscript Accepted: July 15, 2012
Published: August 7, 2012

Vitali V. Kononenko, Vitali V. Konov, and Evgeny M. Dianov, "Delocalization of femtosecond radiation in silicon," Opt. Lett. 37, 3369-3371 (2012)

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