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Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Alan E. Willner
  • Vol. 37, Iss. 17 — Sep. 1, 2012
  • pp: 3693–3695

Enhancement of surface emission in deep ultraviolet AlGaN-based light emitting diodes with staggered quantum wells

Huimin Lu, Tongjun Yu, Gangcheng Yuan, Xinjuan Chen, Zhizhong Chen, Genxiang Chen, and Guoyi Zhang  »View Author Affiliations


Optics Letters, Vol. 37, Issue 17, pp. 3693-3695 (2012)
http://dx.doi.org/10.1364/OL.37.003693


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Abstract

The optical polarization properties of staggered AlGaN-AlGaN/AlN quantum wells (QWs) are investigated using the theoretical model based on the k·p method. The numerical results show that the energy level order and coupling relation of the valence subband structure change in the staggered QWs and the trend is beneficial to TE polarized transition compared to that of conventional AlGaN/AlN QWs. As a result, the staggered QWs have much stronger TE-polarized emission than conventional AlGaN-based QWs, which can enhance the surface emission of deep ultraviolet (DUV) light-emitting diodes (LEDs). The polarization control by using staggered QWs can be applied in high efficiency DUV AlGaN-based LEDs.

© 2012 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Optoelectronics

History
Original Manuscript: May 31, 2012
Revised Manuscript: July 13, 2012
Manuscript Accepted: July 14, 2012
Published: August 30, 2012

Citation
Huimin Lu, Tongjun Yu, Gangcheng Yuan, Xinjuan Chen, Zhizhong Chen, Genxiang Chen, and Guoyi Zhang, "Enhancement of surface emission in deep ultraviolet AlGaN-based light emitting diodes with staggered quantum wells," Opt. Lett. 37, 3693-3695 (2012)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-37-17-3693


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