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Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Alan E. Willner
  • Vol. 37, Iss. 19 — Oct. 1, 2012
  • pp: 3960–3962

Quantum-confined Stark effect at 1.3 μm in Ge/Si0.35Ge0.65 quantum-well structure

Mohamed Said Rouifed, Papichaya Chaisakul, Delphine Marris-Morini, Jacopo Frigerio, Giovanni Isella, Daniel Chrastina, Samson Edmond, Xavier Le Roux, Jean-René Coudevylle, and Laurent Vivien  »View Author Affiliations


Optics Letters, Vol. 37, Issue 19, pp. 3960-3962 (2012)
http://dx.doi.org/10.1364/OL.37.003960


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Abstract

Room-temperature quantum-confined Stark effect in a Ge/SiGe quantum-well structure is reported at the wavelength of 1.3 μm. The operating wavelength is tuned by the use of strain engineering. Low-energy plasma-enhanced chemical vapor deposition is used to grow 20 periods of strain-compensated quantum wells (8 nm Ge well and 12 nm Si0.35Ge0.65 barrier) on Si0.21Ge0.79 virtual substrate. The fraction of light absorbed per well allows for a strong modulation around 1.3 μm. The half-width at half-maximum of the excitonic peak of only 12 meV allows for a discussion on physical mechanisms limiting the performances of such devices.

© 2012 Optical Society of America

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.0250) Optical devices : Optoelectronics

ToC Category:
Optical Devices

History
Original Manuscript: July 25, 2012
Manuscript Accepted: August 6, 2012
Published: September 18, 2012

Citation
Mohamed Said Rouifed, Papichaya Chaisakul, Delphine Marris-Morini, Jacopo Frigerio, Giovanni Isella, Daniel Chrastina, Samson Edmond, Xavier Le Roux, Jean-René Coudevylle, and Laurent Vivien, "Quantum-confined Stark effect at 1.3 μm in Ge/Si0.35Ge0.65 quantum-well structure," Opt. Lett. 37, 3960-3962 (2012)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-37-19-3960


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