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Optics Letters

Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Alan E. Willner
  • Vol. 37, Iss. 19 — Oct. 1, 2012
  • pp: 4035–4037

Epitaxial III-V-on-silicon waveguide butt-coupled photodetectors

Shaoqi Feng, Yu Geng, Kei May Lau, and Andrew W. Poon  »View Author Affiliations


Optics Letters, Vol. 37, Issue 19, pp. 4035-4037 (2012)
http://dx.doi.org/10.1364/OL.37.004035


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Abstract

We report silicon waveguide butt-coupled p-i-n InGaAs photodetectors epitaxially grown on silicon-on-insulator substrates by metalorganic chemical vapor deposition. The InGaAs absorption layer that is lattice-matched to InP is selectively grown on patterned SOI substrates, employing metamorphic growth of GaAs and InP buffer layers. We measure a dark current of 2.5 μA and a responsivity of 0.17A/W at 1550 nm wavelength upon 1V bias voltage, with a 20μm×20μm InGaAs photodetector area. This device exhibits a 3 dB bandwidth of 9 GHz upon 4V bias voltage. We demonstrate an open-eye diagram at 10Gb/s data rate upon 4V bias voltage.

© 2012 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(230.5160) Optical devices : Photodetectors
(250.0040) Optoelectronics : Detectors

ToC Category:
Optical Devices

History
Original Manuscript: July 13, 2012
Revised Manuscript: August 27, 2012
Manuscript Accepted: August 27, 2012
Published: September 21, 2012

Citation
Shaoqi Feng, Yu Geng, Kei May Lau, and Andrew W. Poon, "Epitaxial III-V-on-silicon waveguide butt-coupled photodetectors," Opt. Lett. 37, 4035-4037 (2012)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-37-19-4035

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