OSA's Digital Library

Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 37, Iss. 19 — Oct. 1, 2012
  • pp: 4035–4037

Epitaxial III-V-on-silicon waveguide butt-coupled photodetectors

Shaoqi Feng, Yu Geng, Kei May Lau, and Andrew W. Poon  »View Author Affiliations

Optics Letters, Vol. 37, Issue 19, pp. 4035-4037 (2012)

View Full Text Article

Enhanced HTML    Acrobat PDF (433 KB)

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools



We report silicon waveguide butt-coupled p-i-n InGaAs photodetectors epitaxially grown on silicon-on-insulator substrates by metalorganic chemical vapor deposition. The InGaAs absorption layer that is lattice-matched to InP is selectively grown on patterned SOI substrates, employing metamorphic growth of GaAs and InP buffer layers. We measure a dark current of 2.5 μA and a responsivity of 0.17A/W at 1550 nm wavelength upon 1V bias voltage, with a 20μm×20μm InGaAs photodetector area. This device exhibits a 3 dB bandwidth of 9 GHz upon 4V bias voltage. We demonstrate an open-eye diagram at 10Gb/s data rate upon 4V bias voltage.

© 2012 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(230.5160) Optical devices : Photodetectors
(250.0040) Optoelectronics : Detectors

ToC Category:
Optical Devices

Original Manuscript: July 13, 2012
Revised Manuscript: August 27, 2012
Manuscript Accepted: August 27, 2012
Published: September 21, 2012

Shaoqi Feng, Yu Geng, Kei May Lau, and Andrew W. Poon, "Epitaxial III-V-on-silicon waveguide butt-coupled photodetectors," Opt. Lett. 37, 4035-4037 (2012)

Sort:  Author  |  Year  |  Journal  |  Reset  


  1. C. T. DeRose, D. C. Trotter, W. A. Zortman, A. L. Starbuck, M. Fisher, M. R. Watts, and P. S. Davids, Opt. Express 19, 24897 (2011). [CrossRef]
  2. L. Vivien, A. Polzer, D. Marris-Morini, J. Osmond, J. M. Hartmann, P. Crozat, E. Cassan, C. Kopp, H. Zimmermann, and J. M. Fédéli, Opt. Express 20, 1096 (2012). [CrossRef]
  3. R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, Opt. Express 20, 11316 (2012). [CrossRef]
  4. H. Park, A. W. Fang, R. Jones, O. Cohen, O. Raday, M. N. Sysak, M. J. Paniccia, and J. E. Bowers, Opt. Express 15, 6044 (2007). [CrossRef]
  5. P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J. M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. van Veldhoven, R. Notzel, and M. K. Smit, IEEE Photon. J. 2, 299 (2010). [CrossRef]
  6. R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, Nat. Photonics 5, 170 (2011). [CrossRef]
  7. Y. Gao, Z. Zhong, S. Feng, Y. Geng, H. Liang, A. W. Poon, and K. M. Lau, IEEE Photon. Technol. Lett. 24, 237 (2012). [CrossRef]
  8. J. Bowers and C. Burrus, J. Lightwave Technol. 5, 1339 (1987). [CrossRef]
  9. G. Wang, T. Tokumitsu, I. Hanawa, K. Sato, and M. Kobayashi, IEEE Microwave Compon. Lett. 12, 378 (2002). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


Fig. 1. Fig. 2. Fig. 3.
Fig. 4.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited