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High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability |
Optics Letters, Vol. 37, Issue 19, pp. 4071-4073 (2012)
http://dx.doi.org/10.1364/OL.37.004071
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Abstract
We demonstrate high-brightness 1.3 μm tapered lasers with high temperature stability by using p-doped InAs/GaAs quantum dots (QDs) as the active region. It is found that the beam quality factor
© 2012 Optical Society of America
OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(250.0250) Optoelectronics : Optoelectronics
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices
ToC Category:
Optoelectronics
History
Original Manuscript: April 23, 2012
Revised Manuscript: August 14, 2012
Manuscript Accepted: August 21, 2012
Published: September 24, 2012
Citation
Yulian Cao, Haiming Ji, Pengfei Xu, Yongxian Gu, Wenquan Ma, and Tao Yang, "High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability," Opt. Lett. 37, 4071-4073 (2012)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-37-19-4071
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